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- دیتاشیت FCP20N60
FCP20N60 دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | FCP20N60 |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FCP20N60 |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
FCP(F)20N60 11 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCP20N60
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 208W
- Total Gate Charge (Qg@Vgs): 98nC@10V
- Input Capacitance (Ciss@Vds): 3080pF@25V
- Continuous Drain Current (Id): 20A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10A,10V
- Package: TO-220
- Manufacturer: onsemi
- Series: SuperFET™
- Packaging: Tube
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FCP20
- detail: N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3